drd2000l45 rectifier diode ds 5979 C 2 january 2014 (ln 31197 ) 1 /7 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v rrm v conditions drd 2000l45 drd2000l44 drd2000l42 drd2000l40 45 00 44 00 42 00 4000 v rsm = v rrm +100v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: drd 2000l42 for a 42 00v device key parameters v rrm 45 00 v i f(av) 2000 a i fsm 310 00 a outline type code: l (see package details for further information) fig. 1 package outline
drd2 0 0 0l45 2 / 7 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 259 0 a i f(rms) rms value - 4068 a i f continuous (direct) on - state current - 3727 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 1940 a i f(rms) rms value - 3047 a i f continuous (direct) on - state current - 2656 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 2000 a i f(rms) rms value - 3140 a i f continuous (direct) on - state current - 2800 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 1284 a i f(rms) rms value - 2017 a i f continuous (direct) on - state current - 1715 a
- 3 - drd2 00l45 3 / 7 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 24.8 ka i 2 t i 2 t for fusing v r = 50% v rrm - ? sine 3.075 ma 2 s i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 31.0 ka i 2 t i 2 t for fusing v r = 0 4.8 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.013 c/w single side cooled anode dc - 0.025 c/w cathode dc - 0.027 c/w r th(c - h) thermal resistance C case to heatsink clamping force 45 kn double side - 0.00 3 c/w (with mounting compound) single side - 0.0 06 c/w t vj virtual junction temperature on - state (conducting) - 160 c reverse (blocking) - 150 c t stg storage temperature range - 55 1 75 c f m clamping force 40 48 kn
drd2 0 0 0l45 4 / 7 www.dynexsemi.com characteristics symbol parameter test conditions min. max. units v fm forward voltage at 30 00 a peak, t case = 25 c - 1.45 v i rm peak reverse current at v r rm, t case = 15 0c - 1 50 ma q s total stored charge i f = 1 5 00a, di rr /dt =25 a/s - 6000 c i rr peak reverse recovery current t case = 25 c, v r =100v - 500 a v to threshold voltage at t vj = 1 5 0c - 0.8 4 v r t slope resistance at t vj = 1 5 0c - 0. 19 m ? curves fig.2 maximum (limit) on - state characteristics fig.3 dissipation curves v tm equation where a = - 0.36984 b = 0.292197 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000 354 d = - 0.0311 1 these values are valid for t j = 150c for i f 5 00 a to 100 00 a
- 5 - drd2 00l45 5 / 7 www.dynexsemi.com fig.4 surge (non - repetitive) forward current vs time (t case 150c) fig.5 maximum (limit) transient thermal impedance - junction to case
drd2 0 0 0l45 6 / 7 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. normal weight: 110 0g clamping force: 45 kn10% package outline type code: l note: some packages may be supplied with gate and or tags.
- 7 - drd2 00l45 7 / 7 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not c onstitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electrocut ion or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handli ng using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is i n progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publica tion are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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